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RM12N650T2
Part number：
RM12N650T2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Rectron USA
describe：
MOSFET N-CH 650V 11.5A TO220-3
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 3600
minimum : 2000
quantity
unit price
price
2000
1.45
2900
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220-3
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    360mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    870 pF @ 50 V
  • Power Dissipation (Max)
    101W (Tc)
  • FET Feature
    -
  • 18098902467

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