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IV2Q12080T4Z
Part number：
IV2Q12080T4Z
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Inventchip
describe：
GEN2, SIC MOSFET, 1200V 80MOHM,
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 1660
minimum : 1
quantity
unit price
price
1
8.19
8.19
10
5.58
55.8
100
4.1
410
500
3.54
1770
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    104mOhm @ 10A, 18V
  • Vgs(th) (Max) @ Id
    4.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs
    53 nC @ 18 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1214 pF @ 800 V
  • Power Dissipation (Max)
    250W (Tc)
  • FET Feature
    -
  • 18098902467

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