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IV2Q06060T4Z
Part number：
IV2Q06060T4Z
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Inventchip
describe：
GEN 2, SIC MOSFET, 650V 60MOHM,
package：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 1660
minimum : 1
quantity
unit price
price
1
8.99
8.99
10
6.15
61.5
100
4.55
455
500
4
2000
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    53mOhm @ 15A, 18V
  • Vgs(th) (Max) @ Id
    4.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs
    64 nC @ 18 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1218 pF @ 600 V
  • Power Dissipation (Max)
    174W (Tc)
  • FET Feature
    -
  • 18098902467

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