collect compare
IV2Q06025T4Z
Part number：
IV2Q06025T4Z
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Inventchip
describe：
GEN 2, SIC MOSFET, 650V 25MOHM,
package：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 1660
minimum : 1
quantity
unit price
price
1
12.48
12.48
10
8.7
87
100
6.56
656
500
6.15
3075
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    33mOhm @ 40A, 18V
  • Vgs(th) (Max) @ Id
    4.5V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs
    125 nC @ 18 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    3090 pF @ 600 V
  • Power Dissipation (Max)
    454W (Tc)
  • FET Feature
    -
  • 18098902467

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.