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G12P03D3
Part number：
G12P03D3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Goford Semiconductor
describe：
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
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inventory 9033
minimum : 1
quantity
unit price
price
1
0.89
0.89
10
0.55
5.5
100
0.36
36
500
0.28
140
1000
0.25
250
2000
0.23
460
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    8-PowerVDFN
  • Supplier Device Package
    8-DFN (3.15x3.05)
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    30 V
  • Current - Continuous Drain (Id) @ 25°C
    12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    20mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    24.5 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1337 pF @ 15 V
  • Power Dissipation (Max)
    30W (Tc)
  • FET Feature
    -
  • 18098902467

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