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EPC7014UBSH
Part number：
EPC7014UBSH
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
EPC Space, LLC
describe：
GAN FET HEMT 60V 1A 4UB
package：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1620
minimum : 1
quantity
unit price
price
1
232.4
232.4
10
222.91
2229.1
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    4-SMD, No Lead
  • Supplier Device Package
    4-SMD
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Rds On (Max) @ Id, Vgs
    580mOhm @ 1A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 140µA
  • Vgs (Max)
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    22 pF @ 30 V
  • Power Dissipation (Max)
    -
  • FET Feature
    -
  • 18098902467

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