TP65H100G4PS
Part Number:
TP65H100G4PS
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Transphorm
Description:
Hi Volt FETs
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Technology GaNFET (Gallium Nitride)
- Gate Charge (Qg) (Max) @ Vgs 14.4 nC @ 10 V
- Rds On (Max) @ Id, Vgs 110mOhm @ 12A, 10V
- Power Dissipation (Max) 65.8W (Tc)
- Current - Continuous Drain (Id) @ 25°C 18.9A (Tc)
- Vgs(th) (Max) @ Id 4.1V @ 1.8mA
- Input Capacitance (Ciss) (Max) @ Vds 818 pF @ 400 V