TP65H050G4WS
Part Number:
TP65H050G4WS
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Transphorm
Description:
650 V 34 A GAN FET
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-247-3
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Technology GaNFET (Gallium Nitride)
- Power Dissipation (Max) 119W (Tc)
- Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id 4.8V @ 700µA
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V